Low Power Current-Mode Threshold Logic Gate Using Nano-Technology Double-Gate MOSFETs
نویسندگان
چکیده
منابع مشابه
Use of nano-scale double-gate MOSFETs in low-power tunable current mode analog circuits
Use of independently-driven nano-scale double gate (DG) MOSFETs for low-power analog circuits is emphasized and illustrated. In independent drive configuration, the top gate response of DG-MOSFETs can be altered by application of a control voltage on the bottom gate. We show that this could be a powerful method to conveniently tune the response of conventional CMOS analog circuits especially fo...
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Self-consistent full-band Monte Carlo simulations are employed to compare the performance of nanoscale strained-Si single-gate (SG) and unstrained-Si double-gate (DG) MOSFETs for a gate length of 25 nm. Almost the same on-current as in the DG-MOSFET can be achieved by strain in a SG-MOSFET for the same gate overdrive. This is due to the compensation of the higher electron sheet density in the t...
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ژورنال
عنوان ژورنال: The International Conference on Electrical Engineering
سال: 2010
ISSN: 2636-4441
DOI: 10.21608/iceeng.2010.33018